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IXFN27N80Q

Fabrikant Varenummer:
IXFN27N80Q
Producent / Brand
IXYS
Del af beskrivelse:
MOSFET N-CH 800V 27A SOT-227B
Dataark:
IXFN27N80Q.pdf
Blyfri Status / RoHS Status:
Lager tilstand:
Ny original, lager til rådighed.
Skib fra:
Hong Kong
Forsendelsesmåde:
DHL/Fedex/TNT/UPS

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Varenummer IXFN27N80Q
Producent / Brand IXYS
Kategori Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Single
Beskrivelse MOSFET N-CH 800V 27A SOT-227B
Blyfri Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4.5V @ 4mA
Vgs (Max) ±20V
Teknologi MOSFET (Metal Oxide)
Leverandør Device Package SOT-227B
Serie HiPerFET™, Q Class
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
Power Dissipation (Max) 520W (Tc)
Pakke / tilfælde SOT-227-4, miniBLOC
Pakke Tube
Driftstemperatur -55°C ~ 150°C (TJ)
Monteringstype Chassis Mount
Inputkapacitans (Ciss) (Max) @ Vds 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
FET Type N-Channel
FET-funktion -
Drevspænding (Maks. RDS On, Min Rds On) 10V
Afløb til Source Voltage (VDSS) 800 V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C 27A (Tc)
Basisproduktnummer IXFN27

Emballage

Vi tilbyder den højeste kvalitet, mest økonomisk billigt statisk skjold emballage til rådighed. Med 40% lys gennemsigtighed giver det mulighed for nem identifikation af IC'er (integrerede kredsløb) og printkort (printcircuit boards). Den ekstremt holdbare begravede metalkonstruktion giver FaradayCage-ydelse, der er nødvendig for effektivt at beskytte disse componenets mod statisk ladning.

Alle produkterne pakker i anti-statisk taske. Skib med ESD antistatisk beskyttelse.
Udenfor ESD-pakningens etiket anvendes vores company's oplysninger: Del Mumber, Brand og Quantity.
Vi vil inspicere alle varer før forsendelse, sikre alle produkter i god stand og sikre, at dele er nye originalmatch dataark.
Når alle varerne er sikre, at der ikke opstår problemer efterpakning, pakker vi os sikkert og sendes med global express. Den udviser en fremragende punktering og rivningsmodstand sammen med god tætningsintegritet.
Vi kan tilbyde verdensomspændende ekspresleverance, såsom DHLor FedEx eller TNT eller UPS eller anden speditør til forsendelse.

Global forsendelse med DHL / FedEx / TNT / UPS

Forsendelsesgebyrer reference DHL / FedEx
1). Du kan tilbyde din ekspressleveringskonto for forsendelse, hvis du ikke har nogen eksplicit konto for forsendelse, kan vi tilbyde vores konto inadvance.
2). Brug vores konto til forsendelse, forsendelsesafgifter (Reference DHL / FedEx, forskellige lande har forskellige priser.)
Forsendelsesgebyrer: (Reference DHL og FedEX)
Vægt (KG): 0,00 kg-1,00 kg Pris (USD $): USD $ 60.00
Vægt (KG): 1,00 kg-2,00 kg Pris (USD $): USD $ 80.00
* Prisen på prisen er reference med DHL / FedEx. Detaljeafgifterne, kontakt os venligst. Forskelligt land de ekspresafgifter er forskellige.



IXFN27N80Q Produktdetaljer.:

IXFN27N80Q: A High-performance N-Channel MOSFET for Power Electronics The IXFN27N80Q is a top-of-the-range N-Channel MOSFET that stands out for its exceptional performance parameters and versatility. This discrete semiconductor product is part of the Transistors - FETs family and belongs to the MOSFETs - Single category. Its model number is IXFN27N80Q. This product is designed to meet the huge power requirements of industrial and commercial applications. With an output voltage of 800V, a current rating of 27A, a power rating of 330W, and an accuracy of +/- 30V, the IXFN27N80Q ensures consistent power supply even in challenging environments. Moreover, this MOSFET delivers high efficiency levels of up to 84%, which translates to greater power savings and reduced operating costs. The IXFN27N80Q can be used with a wide variety of electronic devices, including power inverters, ac/dc converters, motor control systems, and welding systems, among others. It is widely used in industries such as automotive, aerospace, and construction, where reliable and robust power electronics are a requirement. Some of its specific applications include voltage regulators, switching regulators, and high-speed signal processing. This MOSFET is a digital integrated circuit with three components: the gate, source, and drain. The gate controls the current flow between the source and drain, with the application of a voltage. When the voltage is low, the current will not be allowed to pass, and when it is high, the current will be conducted through the channel. The IXFN27N80Q is an N-channel MOSFET, which means that it conducts current when a negative voltage is applied to the gate. The complex manufacturing process involved in producing the IXFN27N80Q should not be taken for granted. It involves various stages, ranging from chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, to bonding, packaging, and testing. The end product must undergo rigorous testing to ensure that it meets the required quality standards. In conclusion, the IXFN27N80Q is an outstanding N-Channel MOSFET that has proven itself in the semiconductor industry. Its power-packed performance, versatility, and robustness make it an ideal choice for industrial and commercial applications that require high-powered electronics. Whether it's voltage regulators, switching regulators, or high-speed signal processing, the IXFN27N80Q is undoubtedly the MOSFET of choice for power electronics.

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