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IXFN27N80Q

Manifakti Nimewo Pati:
IXFN27N80Q
Manifakti / Brand
IXYS
Pati nan Deskripsyon:
MOSFET N-CH 800V 27A SOT-227B
Datasheets:
IXFN27N80Q.pdf
Plon gratis Status / RoHS Status:
Stock kondisyon:
Nouvo orijinal, Stock Disponib.
Bato de:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Nimewo Pati IXFN27N80Q
Manifakti / Brand IXYS
Kategori Diskresyon semiconductor pwodwi > Transistors - FETs, MOSFETs - Single
Deskripsyon MOSFET N-CH 800V 27A SOT-227B
Plon gratis Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4.5V @ 4mA
Vgs (Max) ±20V
Teknoloji MOSFET (Metal Oxide)
Founisè Aparèy pake SOT-227B
Seri HiPerFET™, Q Class
Rds Sou (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
Dissipasyon pouvwa (Max) 520W (Tc)
Pake / Ka SOT-227-4, miniBLOC
Pakèt Tube
Operating Tanperati -55°C ~ 150°C (TJ)
Mounting Kalite Chassis Mount
Kapasite Antre (Ciss) (Max) @ Vds 7600 pF @ 25 V
Pòtay Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Fèt tip N-Channel
FET Feature -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V
Drenaj Sous Voltage (Vdss) 800 V
Kouran - Kontini Drain (Id) @ 25 ° C 27A (Tc)
Nimewo pwodwi baz IXFN27

Anbalaj

Nou ofri bon jan kalite ki pi wo a, ki pi ekonomikman pri anbalaj pwoteksyon estatik ki disponib. Avèk 40% transparans limyè, itallows pou idantifikasyon fasil nan IC a (sikwi entegre) ak PCB a (printscircuit ankadreman). Tretman ki pi dirab ki gen antye metal yo bay pèfòmans FaradayCage ki nesesè pou yo byen pwoteje eleman sa yo kont chaj otomatik yo.

Tout pwodwi yo pral procesna nan anti-staticbag. Bato ak pwoteksyon antistatik ESD.
Eksepte pake ESD anbalaj a pral sèvi ak enfòmasyon konpayi nou an: Pati mòmon, mak ak Kantite.
Nou pral enspekte tout byen yo anvan chajman, asire tout pwodwi yo nan bon kondisyon epi asire ke pati yo se nouvo orijinalmatch fichye.
Apre tout machandiz yo asire pa gen okenn pwoblèm afterpacking, nou pral procesna san danje epi voye pa eksprime mondyal. Li exhibitsexcellent bon rezistans ak dlo ansanm ak entegrite bon sele.
Nou ka ofri sèvis livrezon atravè lemond eksprime, tankou DHLor FedEx oswa TNT oswa UPS oswa lòt komisè pou chajman.

Global Shipment pa DHL / FedEx / TNT / UPS

Frè anbak referans DHL / FedEx
1). Ou ka ofri eksprime kont livrezon ou pou chajman, si ou pa gen okenn kont eksprime pou chajman, nou ka ofri inadvance kont nou an.
2). Sèvi ak kont nou pou chajman, chaj chajman (Referans DHL / FedEx, diferan peyi gen pri diferan.)
Chaj chajman: (Referans DHL ak FedEx)
Pwa (KG): 0.00kg-1.00kg Pri (USD $): USD $ 60.00
Pwa (KG): 1.00kg-2.00kg Pri (USD $): USD $ 80.00
* Pri a nan pri a se referans ak DHL / FedEx. Chaj detay yo, tanpri kontakte nou. Diferan peyi chaj eksprime yo diferan.



IXFN27N80Q Pwodwi Detay yo:

IXFN27N80Q: A High-performance N-Channel MOSFET for Power Electronics The IXFN27N80Q is a top-of-the-range N-Channel MOSFET that stands out for its exceptional performance parameters and versatility. This discrete semiconductor product is part of the Transistors - FETs family and belongs to the MOSFETs - Single category. Its model number is IXFN27N80Q. This product is designed to meet the huge power requirements of industrial and commercial applications. With an output voltage of 800V, a current rating of 27A, a power rating of 330W, and an accuracy of +/- 30V, the IXFN27N80Q ensures consistent power supply even in challenging environments. Moreover, this MOSFET delivers high efficiency levels of up to 84%, which translates to greater power savings and reduced operating costs. The IXFN27N80Q can be used with a wide variety of electronic devices, including power inverters, ac/dc converters, motor control systems, and welding systems, among others. It is widely used in industries such as automotive, aerospace, and construction, where reliable and robust power electronics are a requirement. Some of its specific applications include voltage regulators, switching regulators, and high-speed signal processing. This MOSFET is a digital integrated circuit with three components: the gate, source, and drain. The gate controls the current flow between the source and drain, with the application of a voltage. When the voltage is low, the current will not be allowed to pass, and when it is high, the current will be conducted through the channel. The IXFN27N80Q is an N-channel MOSFET, which means that it conducts current when a negative voltage is applied to the gate. The complex manufacturing process involved in producing the IXFN27N80Q should not be taken for granted. It involves various stages, ranging from chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, to bonding, packaging, and testing. The end product must undergo rigorous testing to ensure that it meets the required quality standards. In conclusion, the IXFN27N80Q is an outstanding N-Channel MOSFET that has proven itself in the semiconductor industry. Its power-packed performance, versatility, and robustness make it an ideal choice for industrial and commercial applications that require high-powered electronics. Whether it's voltage regulators, switching regulators, or high-speed signal processing, the IXFN27N80Q is undoubtedly the MOSFET of choice for power electronics.

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