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IXFN27N80Q

vervaardiger Onderdeel nommer:
IXFN27N80Q
Vervaardiger / Handelsmerk
IXYS
Deel van Beskrywing:
MOSFET N-CH 800V 27A SOT-227B
Inligtingsblaaie:
IXFN27N80Q.pdf
Lei Vrye Status / RoHS Status:
Voorraadvoorwaarde:
Nuwe oorspronklike, voorraad beskikbaar.
Stuur Van:
Hong Kong
Verskeping manier:
DHL/Fedex/TNT/UPS

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Onderdeel nommer IXFN27N80Q
Vervaardiger / Handelsmerk IXYS
kategorie Diskrete Halfgeleier Produkte > Transistors - VOO's, MOSFETs - Enkel
beskrywing MOSFET N-CH 800V 27A SOT-227B
Lei Vrye Status / RoHS Status: RoHS Compliant
Vgs (th) (Max) @ Id 4.5V @ 4mA
Vgs (Max) ±20V
tegnologie MOSFET (Metal Oxide)
Verskaffer toestel pakket SOT-227B
reeks HiPerFET™, Q Class
Rds On (Maksimum) @ Id, Vgs 320mOhm @ 500mA, 10V
Kragdissipasie (Max) 520W (Tc)
Pakket / saak SOT-227-4, miniBLOC
Pakkie Tube
Werkstemperatuur -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Inset Kapasitansie (Ciss) (Max) @ Vds 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
VOO-tipe N-Channel
VOO-funksie -
Ryspanning (Maksimum Rds Aan, Min Rds Aan) 10V
Dreineer na Bronspanning (Vdss) 800 V
Huidige - Deurlopende dreinering (Id) @ 25 ° C 27A (Tc)
Basisproduknommer IXFN27

verpakking

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Gestuur koste : (Verwysing DHL en FedEX)
Gewig (KG): 0,00 kg tot 1,00 kg Prys (USD $): USD $ 60,00
Gewig (KG): 1,00 kg-2,00 kg Prys (USD $): USD $ 80,00
* Die prys van koste verwys na DHL / FedEx. Kontak ons ​​asb. In verskillende lande is die uitdruklike aanklagte verskillend.



IXFN27N80Q Produk besonderhede:

IXFN27N80Q: A High-performance N-Channel MOSFET for Power Electronics The IXFN27N80Q is a top-of-the-range N-Channel MOSFET that stands out for its exceptional performance parameters and versatility. This discrete semiconductor product is part of the Transistors - FETs family and belongs to the MOSFETs - Single category. Its model number is IXFN27N80Q. This product is designed to meet the huge power requirements of industrial and commercial applications. With an output voltage of 800V, a current rating of 27A, a power rating of 330W, and an accuracy of +/- 30V, the IXFN27N80Q ensures consistent power supply even in challenging environments. Moreover, this MOSFET delivers high efficiency levels of up to 84%, which translates to greater power savings and reduced operating costs. The IXFN27N80Q can be used with a wide variety of electronic devices, including power inverters, ac/dc converters, motor control systems, and welding systems, among others. It is widely used in industries such as automotive, aerospace, and construction, where reliable and robust power electronics are a requirement. Some of its specific applications include voltage regulators, switching regulators, and high-speed signal processing. This MOSFET is a digital integrated circuit with three components: the gate, source, and drain. The gate controls the current flow between the source and drain, with the application of a voltage. When the voltage is low, the current will not be allowed to pass, and when it is high, the current will be conducted through the channel. The IXFN27N80Q is an N-channel MOSFET, which means that it conducts current when a negative voltage is applied to the gate. The complex manufacturing process involved in producing the IXFN27N80Q should not be taken for granted. It involves various stages, ranging from chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, to bonding, packaging, and testing. The end product must undergo rigorous testing to ensure that it meets the required quality standards. In conclusion, the IXFN27N80Q is an outstanding N-Channel MOSFET that has proven itself in the semiconductor industry. Its power-packed performance, versatility, and robustness make it an ideal choice for industrial and commercial applications that require high-powered electronics. Whether it's voltage regulators, switching regulators, or high-speed signal processing, the IXFN27N80Q is undoubtedly the MOSFET of choice for power electronics.

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