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Isithombe singabekwa.
Bona ama-specs ngemininingwane yomkhiqizo.

IXFE23N100

Umkhiqizi Inombolo Yengxenye:
IXFE23N100
Umkhiqizi / Umkhiqizo
IXYS
Ingxenye Yokuchaza:
MOSFET N-CH 1000V 21A SOT227B
Amadokhumenti:
IXFE23N100.pdf
Isimo samahhala sendawo / isimo se-RoHS:
Isimo se-Stock:
Ukuqala okusha, Stock etholakalayo.
Umkhumbi ovela:
Hong Kong
Ukuthunyelwa Kwendlela:
DHL/Fedex/TNT/UPS

Inquiry Online

Sicela ugcwalise zonke izinkambu ezidingekayo ngemininingwane yakho yokuxhumana.Chofoza u- "FUNA ISICELO"sizokuthinta kungekudala nge-imeyili. Noma usithumele i-imeyili: I-info@fuji-modules.com
Inombolo Yengxenye
Umkhiqizi
Kudinga inani
Intengo Eqondiwe(USD)
Igama Lenkampani
igama longaxhumana naye
Imeyili
Ifoni
Umlayezo
Sicela ufake ikhodi yokuqinisekisa bese uchofoza okuthi "thumela"
Inombolo Yengxenye IXFE23N100
Umkhiqizi / Umkhiqizo IXYS
Isigaba Imikhiqizo ye-Semiconductor eqondayo > Abakwa-Transistors - Izindebe, Ama-Mossets - Single
Incazelo MOSFET N-CH 1000V 21A SOT227B
Isimo samahhala sendawo / isimo se-RoHS: RoHS Compliant
I-Vgs (th) (Max) @ Id 5V @ 8mA
I-Vgs (i-Max) ±20V
Ubuchwepheshe MOSFET (Metal Oxide)
Iphakheji yedivaysi yensiza SOT-227B
Uchungechunge HiPerFET™
Ama-Rds On (Max) @ Id, Vgs 430mOhm @ 11.5A, 10V
Ukusakaza kwamandla (i-Max) 500W (Tc)
Iphakheji / Icala SOT-227-4, miniBLOC
Isishuqulu Box
Ukushisa okusebenzayo -55°C ~ 150°C (TJ)
Uhlobo lokufaka Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 25 V
Ishaja Isango (Qg) (Max) @ Vgs 250 nC @ 10 V
Uhlobo lwe-FET N-Channel
Isici se-FET -
I-Voltage yeDrayivu (i-Max Rds On, i-Min Rds On) 10V
Ukukhipha ku-Source Voltage (Vdss) 1000 V
Okwamanje - Ukukhipha Okuqhubekayo (Id) @ 25 ° C 21A (Tc)
Inombolo yomkhiqizo eyisisekelo IXFE23

Ukupakisha

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Ukuhanjiswa Komhlaba wonke nge-DHL / FedEx / TNT / UPS

Izinkomba Zokuhambisa Izimali DHL / FedEx
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Izindleko zokuthumela: (Reference DHL and FedEX)
Isisindo (KG): 0.00kg-1.00kg Intengo (i-USD $): i-USD $ 60,00
Isisindo (KG): 1.00kg-2.00kg Intengo (i-USD $): i-USD $ 80,00
* Intengo yezindleko kubhekiswa kuyo ne-DHL / FedEx. Imininingwane ikhokhiswa, sicela uxhumane nathi. Izwe elihlukile amacala akhombisa wona ahlukile.



IXFE23N100 Imininingwane Yomkhiqizo:

Title: Introducing the IXFE23N100 - High-Performance N-Channel MOSFET for Efficient and Effective Global Use If you are in search of a powerful and reliable transistor for your electronic devices, then look no further than the IXFE23N100 - an N-channel MOSFET that offers high performance and long-lasting energy efficiency. As a part of the Discrete Semiconductor Products classification, this transistor is the ideal solution for a wide range of applications, including power supplies, inverters, and motor control circuits. Main Features and Performance Parameters: With an output voltage of 1000V and a current rating of 21A, the IXFE23N100 proves to be a versatile N-channel MOSFET. It is designed for high switching frequencies and optimized for low switching losses. Maintaining high accuracy and efficiency, it has a temperature range of -55°C to +175°C, making it applicable for both low and high temperature environments. Application Scenarios and Usage: The IXFE23N100 is perfect for use in a multitude of electronic devices and applications. From inverters to motor control circuits, its high-performance characteristics make it perfect for industries such as renewables, energy storage, heavy industry, and logistics, and automation. With a breakdown voltage of 1000V, it provides exceptional performance for high voltage applications. Different Types of Integrated Circuits: Integrated circuits can be classified into various types such as digital, analog, mixed signal, and RF. The IXFE23N100 is an N-channel MOSFET and falls under the analog category that is specifically designed for unique applications such as power supplies. Unlike mixed signal and digital circuits, analog circuits contain electro-mechanical components. Manufacturing and Testing: Integrated circuits are designed and manufactured using a complex process, and the IXFE23N100 is no different. The manufacturing process involves chip designing, cutting, cleaning, laser processing, back grinding, doping, exposure, and vapor deposition. Testing is an essential part of the production process, as every finished product undergoes appropriate testing to ensure its safety, reliability, and quality. In conclusion, the IXFE23N100 is a high-performance and energy-efficient N-channel MOSFET transistor, which is perfect for multiple applications. Its advanced features and high-temperature range make it an ideal choice for industries such as renewables, energy storage, heavy industry, logistics, and automation. Moreover, through appropriate packaging and testing, the finished product is sure to meet all necessary industry standards and be of the highest quality. Choose the IXFE23N100 for all your transistor needs and take advantage of its unparalleled performance and reliability.

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